Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

Details Fabrication of stable, wide-bandgap thin films of Mg, Zn and O Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

2006-07-25

2006-07-25

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S479000

Reexamination Certificate

active

07081371

ABSTRACT:
A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al2O3substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750° C.

REFERENCES:
patent: 6617183 (2003-09-01), Kadota et al.
patent: 2002/0084466 (2002-07-01), Narayan et al.
patent: 2003/0129307 (2003-07-01), Lu et al.
patent: 2003/0160176 (2003-08-01), Vispute et al.
patent: 2005/0020035 (2005-01-01), Nause et al.
patent: 2006/0054888 (2006-03-01), Ito et al.
patent: 863555 (1998-09-01), None
S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan and H. Shen; Realization of band gap above 5.0 eV in metastable cubic-phase MgxXN1−xO alloy films;Applied Physics Letters, vol. 80, No. 9; 2002; pp. 1529-1531; USA.
T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, T. Suemoto, H. Akiyama, M. Baba, S. Saito, T. Tomita and H. Koinuma; Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn)O multiple quantum wells;Applied Physics Letters, vol. 78, No. 14; 2001; pp. 1979-1981; Japan.
T. Makino, C. H. Chia, Nguen T. Tuan, H. D. Sun, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura and H. Koinuma; Room Temperature luminescence of excitons in ZnO/(Mg,Zn)O multiple quantum wells on lattice-matched substrates;Applied Physics Letters, vol. 77, No. 7; 2000; pp. 975-977; Japan.
Y. Chen, R. Schneider, S. Y. Wang, R. S. Kern, C. H. Chen and C. P. Kuo; Dislocation reduction in GaN thin films via lateral overgrowth from trenches;Applied Physics Letters, vol. 73, No. 14; 1999; pp. 2062-2063; USA.
Toshio Kawahara, Hiroko Uchino, Hiroshi Inai, Kazuhiko Kato, Yoichi Okamoto, Jun Morimoto and Toru Miyakawa; Thermoelectric Properties of and Dopant Distribution in SiC Thin Films;Japanese Journal of Applied Physics; vol. 38; 1999; pp. 4852-4856; Japan.
A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, C. Jin, A. Kvit, R. M. Kolbas, and O. W. Holland; Optical and structural properties of epitaxial MgxZn1−xO alloys;Applied Physics Letters; vol. 75, No. 21; 1999; pp. 3327-3329; USA.
A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda and Y. Segawa; MgxZn1−xO as a II-VI widegap semiconductor alloy;Applied Physics Letters, vol. 72, No. 19; 1998; pp. 2466-2468; Japan.
C. Boney, Z. Yu, W. H. Rowland, Jr., W. C. Hughes, J. W. Cook, Jr., J. F. Schetzina, Gene Cantwell and William C. Harsch; II-VI blue/green laser diodes on ZnSe substrates;J. Vac. Sci. Technol. B 14(3); 1996; pp. 2259-2262; USA.
R. D. Shannon; Revised Effective Ionic Radii and Systematic Studies of Interatomic Distances in Halides and Chalcogenides;Acta Cryst., 1976, pp. 751-767; USA.

Affiliated with

Also associated with

Rating

Fabrication of stable, wide-bandgap thin films of Mg, Zn and O does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of stable, wide-bandgap thin films of Mg, Zn and O, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of stable, wide-bandgap thin films of Mg, Zn and O will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3614348