Fabrication of stabilized polysilicon resistors for SEU control

Details Fabrication of stabilized polysilicon resistors for SEU control Fabrication of stabilized polysilicon resistors for SEU control

1991-12-13

1993-05-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 47, 257154, 257350, H01L 2170, H01L 2700

Patent

active

052121089

ABSTRACT:
A method for fabricating polysilicon resistors of intermediate high value for use as cross-coupling or =ingle event upset (SEU) resistors in memory cells. A thin polysilicon film is implanted with arsenic ions to produce a predetermined resistivity. The thin film is then implanted with fluorine ions to stabilize the grain boundaries and thereby the barrier height. Reducing the variation in barrier height from run to run of wafers allows the fabrication of reproducible SEU resistors.

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