Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1977-06-10
1979-01-30
Tupman, W.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, B01J 1700
Patent
active
041364341
ABSTRACT:
In one embodiment, a relatively thin layer of polysilicon is deposited on an underlying region to which spaced-apart electrical contacts are to be made through a subsequently formed relatively thick insulating layer. The polysilicon is selectively masked by a patterned silicon nitride layer in the regions where contact windows are to be formed. The unmasked polysilicon is then converted to a relatively thick insulating layer in an oxidizing step. Thereafter the silicon nitride portions are removed and the remaining polysilicon is utilized to provide conductive regions in the defined windows. In another embodiment, a relatively thick layer of polysilicon is selectively masked and partially converted to silicon dioxide to define both the insulating layer and the conductive regions. In still another embodiment, a relatively thin layer of polysilicon is patterned and then entirely converted to silicon dioxide to form an insulating layer having windows defined therein.
REFERENCES:
patent: 3761327 (1973-09-01), Harlow
patent: 3764491 (1973-10-01), Schwartz
patent: 3775262 (1973-11-01), Heyerdahl
patent: 3950188 (1976-04-01), Bower
Thibault Louis R.
Yau Leopoldo D.
Bell Telephone Laboratories Incorporated
Canepa Lucian C.
Tupman W.
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