Fabrication of single polarity programmable resistance...

Details Fabrication of single polarity programmable resistance... Fabrication of single polarity programmable resistance...

2006-08-08

2006-08-08

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S084000, C438S095000, C438S308000

Reexamination Certificate

active

07087454

ABSTRACT:
A resistance variable memory element with improved data retention and switching characteristics switched between resistance memory states upon the application of write pulses having the same polarity. The resistance variable memory element can be provided having at least one silver-selenide layer in between glass layers, the glass layers are a chalcogenide glass having a GexSe100−xcomposition.

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