Fabrication of single or multiple gate field plates

Details Fabrication of single or multiple gate field plates Fabrication of single or multiple gate field plates

2004-09-09

2010-10-12

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29246

Reexamination Certificate

active

07812369

ABSTRACT:
A process for fabricating single or multiple gate field plates using consecutive steps of dielectric material deposition/growth, dielectric material etch and metal evaporation on the surface of a field effect transistors. This fabrication process permits a tight control on the field plate operation since dielectric material deposition/growth is typically a well controllable process. Moreover, the dielectric material deposited on the device surface does not need to be removed from the device intrinsic regions: this essentially enables the realization of field-plated devices without the need of low-damage dielectric material dry/wet etches. Using multiple gate field plates also reduces gate resistance by multiple connections, thus improving performances of large periphery and/or sub-micron gate devices.

REFERENCES:
patent: 4999682 (1991-03-01), Xu et al.
patent: 5192987 (1993-03-01), Kahn et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5296395 (1994-03-01), Khan et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5686738 (1997-11-01), Moustakas
patent: 5739554 (1998-04-01), Edmond et al.
patent: 6294801 (2001-09-01), Inokuchi et al.
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6316820 (2001-11-01), Schmitz et al.
patent: 6445038 (2002-09-01), Tihanyi
patent: 6465814 (2002-10-01), Kasahara et al.
patent: 6548333 (2003-04-01), Smith
patent: 6586781 (2003-07-01), Wu et al.
patent: 6586813 (2003-07-01), Nagahara
patent: 7126426 (2006-10-01), Mishra et al.
patent: 2002/0005528 (2002-01-01), Nagahara
patent: 2002/0145172 (2002-10-01), Fujishima et al.
patent: 2002/0167023 (2002-11-01), Chavarkar et al.
patent: 2002/0171096 (2002-11-01), Wakejima et al.
patent: 2003/0006437 (2003-01-01), Mizuta et al.
patent: 2003/0020092 (2003-01-01), Parikh et al.
patent: 2003/0102482 (2003-06-01), Saxler
patent: 2003/0136986 (2003-07-01), ElMasry et al.
patent: WO 03050849 (2003-06-01), None
Richard C. Dorf, “The Electrical Engineering Handbook”, Second Edition, CRC Press, IEEE Press, 1997.
Lester F. Eastman et al., “GaN Materials for High Power Microwave Amplifiers”, Mnt, Res. Soc. Symp. Proc. vol. 512, 1996 Materials Research Society.
Wu et al., “High-gain Microwave GaN HEMTs with Source-terminated Field-plates”, Cree Santa Barbara Technology Center, Goleta, CA.
Y. Ando et al., “10-W/mm AlGaN—GaN HFET With a Field Modulating Plate”, IEEE Electron Device Letters, vol. 24, No. 5, pp. 289-292, May 2003.
Wu et al., “30-W/mm GaN HEMTs by Field Plate Optimization”, IEEE Electron Device Letters, vol. 25, No. 3, 2004.
A.T. Ping et al., “DC and Microwave Performance of High-Current AlGaN/GaN Heterostructure Field Effect Transistors Grown on p-Type Sic Substrates”,IEEE Electron Device Letters, vol. 19, No. 2, Feb. 1998, pp. 54-56.
G.J. Sullivan et al., “High-power 10 GHz Operation of AlGaN HFET's on Insulating SiC”, IEEE Electron Device Letters, vol. 19, No. 6, Jun. 1998.
Wataru Saito et al., “600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter”, IEDM 03-587, 2003 IEEE, pp. 23.7.1-23.7.4.
K. Asano et al., “Novel High Power AlGaAs/GaAs HFET with a Field-Modulating Plate Operated at 35V Drain Voltage”, 1998 International Electron Devices Meeting, Technical Digest, pp. 3.3.1-3.3.4.
Shreepad Karmalkar et al., “Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator”, 2001 Elsevier Science Ltd., Solid-State Electronics 45 (2001) pp. 1645-1652.
Y.-F. Wu et al., “High Al-Content AlGaN/GaN MODFET's for Ultrahigh Performance”, IEEE Electron Device Letters, vol. 19, No. 2, Feb. 1998, pp. 50-53.
R. Gaska et al., “High-Temperature Performance of AlGaN/GaN HFET's on SiC Substrates”, IEEE Electron Device Leters, vol. 18, No. 10, Oct. 1997, pp. 492-494.
Miroslav Micovic et al, “AlGaN/GaN Heterojunction Field Effect Transistors Grown by Nitrogen Plasma Assisted Molecular Beam Epitaxy”, IEEE Transactions on Electron Devices, vol. 48, No. 3, Mar. 2001, pp. 591-596.
Yi-Feng Wu et al., “Very-High Power Density AlGaN/GaN HEMTs”, IEEE Transactions on Electronic Devices, vol. 48, No. 3, Mar. 2001, pp. 586-590.
Yi-Feng Wu et al., “GaN-Based FETs for Microwave Power Amplification”, IEICE Trans. Electron., vol. E82-C, No. 11, Nov. 1999, pp. 1895-1905.
R. Gaska et al., “Electron transport in AlGaN—GaN heterostructures grown on 6H—SiC substrates”, 1998 American Institute of Physics, vol. 72, No. 6, pp. 707-709.
B. Gelmont et al., “Monte Carlo Simulation of Electron Transport in Gallium Nitride”, 1983 American Institute of Physics, vol. 74, No. 3, pp. 1818-1821.
Chinese Office Action issued May 16, 2008, Application No. 200480025976.9.
Li, “High breakdown voltage GaN HFET with field plate,” Electronic Letters, Feb. 1, 2001, vol. 37, No. 3, pp. 196-197.

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