Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2000-04-10
2001-01-30
Bowers, Charles (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
Reexamination Certificate
active
06180432
ABSTRACT:
Cross reference is made to the following copending applications that are in the general field of this invention: application Ser. No. 08/179,601 filed Jan. 10, 1994 of John L. Freeouf titled “Solid State Radiation Detector” and application Ser. NO. 09/034,430 filed Mar. 3, 1998 titled “Multi Absorber Layer Radiated Energy To Electrical Energy Conversion Device” and assigned to the assignee of this invention.
FIELD OF THE INVENTION
The invention relates to a highly efficient, single semiconductor absorption layer, radiated energy conversion device in which there is also provision for accommodation for performance degradation resulting from exposure to external radiation.
BACKGROUND OF THE INVENTION AND RELATION TO THE PRIOR ART
In the conversion of radiated energy to electrical energy, it has been the practice in the art to use solid state semiconductor layer structures that can produce hole-electron pairs that result from atomic particles or photons, in passing through the semiconductor, engaging in primary or secondary collisions with the semiconductor material. The oppositely charged hole-electron pairs are extracted from the absorber and into external circuitry as a signal before they can recombine or be trapped in the semiconductor material.
The environment in which the conversion device is to be used also has a major influence in the design. Use in the atmosphere, nominally Air Mass 1.5 (AM1.5), usually takes place at room temperature in light with a moderate ultra violet (UV) content and minimal other energy radiation. Structural weight is of less concern. Use beyond the atmosphere, in Air Mass 0 (AM0), involves a larger range of temperatures, structural weight is a serious consideration, the radiated energy, usually sunlight is intense with a larger UV content and operation is often in the presence of significant external energy radiation. Structures for AM0 operation frequently have features designed to “harden” or slow down deteriorating effects of external radiation on the performance of the conversion device.
The single absorption layer type of radiated energy to electrical energy conversion device has the advantages of essentially unlimited breadth of device area and relative simplicity in structural features and in fabrication. There are however, in such a device, interrelated structural features that both produce and extract the electrical energy together with reflective mechanisms that operate to get more than one pass out of the radiated energy in hole-electron pair production that, heretofore in the art, required tradeoffs that had a limiting effect on efficiency and made control of radiation damage more difficult.
Among the influencing factors in the design of single absorption member radiated energy to electrical energy conversion structures are: the absorption lengths of the incident radiated energy in the semiconductor material, the compatibility of any radiated energy enhancement features with the extraction of the electrical energy, the attenuation of the radiated energy by the contacting structure and the compatibility of the overall conversion device structure with manufacturing capability.
There has been activity in the art directed to single absorption member semiconductor radiated energy to electrical energy converters. In U.S. Pat. Nos. 5,286,306; 5,342,455; 5,401,330; and 5,419,783 conversion devices are described wherein structural features that are placed in the absorber region of the absorption member for one purpose, interfere with or add complexity, with respect to another purpose. There is a need in the single absorption member art for a radiation conversion device that can provide high efficiency achieved with structural and manufacturing simplicity.
SUMMARY OF THE INVENTION
A radiated energy to electrical energy conversion device and technology is provided where there is a single absorber layer of semiconductor material in a single absorption member that has a unique combination of interdependent features. The thickness of the absorber layer is much less than had been appreciated heretofore in the art as being useful, and makes possible the use of lower quality semiconductor material. Between opposing faces the absorber layer is about ½ or less of the carrier diffusion length of the semiconductor material. The opposing faces of the absorber layer of semiconductor material are each completely covered by a high electrical conductivity, low radiated energy attenuation, electrical conduction layer that extends to an edge of the device for an electrical contact. There is a charge producing carrier separation mechanism in the absorber layer between the conduction layers. The thickness of the absorber layer is selected for maximum electrical signal extraction efficiency and may also be selected to accommodate diffusion length damage over time by external radiation.
The radiated energy to electrical energy conversion device is also provided with an incident radiated energy enhancement and support structure positioned on the conduction layer on the incident radiated energy receiving face of the absorber layer and with a radiated energy internal reflection mechanism positioned on the face of the absorber layer away from the incident radiation that returns the energy that passed through the absorber for extra absorbtion.
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Bowers Charles
Christanson Keith
Interface Studies Inc.
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