Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-03-21
2006-03-21
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S142000, C438S411000, C438S421000, C438S694000, C438S700000, C438S703000, C438S749000
Reexamination Certificate
active
07015147
ABSTRACT:
A method for fabrication of silicon-on-nothing (SON) MOSFET using selective etching of Si1−xGexlayer, includes preparing a silicon substrate; growing an epitaxial Si1−xGexlayer on the silicon substrate; growing an epitaxial thin top silicon layer on the epitaxial Si1−xGexlayer; trench etching of the top silicon and Si1−xGex, into the silicon substrate to form a first trench; selectively etching the Si1−xGexlayer to remove substantially all of the Si1−xGexto form an air gap; depositing a layer of SiO2by CVD to fill the first trench; trench etching to from a second trench; selectively etching the remaining Si1−xGexlayer; depositing a second layer of SiO2by CVD to fill the second trench, thereby decoupling a source, a drain and a channel from the substrate; and completing the structure by state-of-the-art CMOS fabrication techniques.
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Hsu Sheng Teng
Lee Jong-Jan
Goudreau George A.
Sharp Laboratories of America Inc.
Varitz PC Robert D.
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