Fishing – trapping – and vermin destroying
Patent
1994-02-24
1995-01-31
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 40, 437100, 437 47, 437913, 148DIG148, 257 77, H01L 21265
Patent
active
053858557
ABSTRACT:
A depletion mode MOSFET and resistor are fabricated as a silicon carbide (SiC) integrated circuit (IC). The SiC IC includes a first SiC layer doped to a first conductivity type and a second SiC layer overlaid on the first SiC layer and doped to a second conductivity type. The second SiC layer includes at least four more heavily doped regions of the second conductivity type, with two of such regions comprising MOSFET source and drain electrodes and two other of such regions comprising resistor electrodes. The second SiC layer includes an isolation trench between the MOSFET electrodes and the resistor electrodes. At least two electrically conductive contacts are provided as MOSFET electrode contacts, each being positioned over at least a portion of a respective MOSFET electrode and two other electrically conductive contacts are provided as resistor electrode contacts, each being positioned over at least a portion of a respective resistor electrode. An oxide layer extends over the second SiC layer with at least a portion of the oxide layer positioned between the MOSFET electrode contacts. A MOSFET gate electrode is positioned over the oxide layer, and coupling means are provided for electrically couping one of the source, drain, and gate electrodes to one of the resistor electrodes.
REFERENCES:
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4994413 (1991-02-01), Eshita
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5216264 (1993-06-01), Fujii et al.
patent: 5233215 (1993-08-01), Baliga
patent: 5322802 (1994-06-01), Baliga et al.
patent: 5323040 (1994-06-01), Baliga
Brown Dale M.
Kretchmer James W.
Krishnamurthy Vikram B.
Michon Gerald J.
Dang Trung
General Electric Company
Hearn Brian E.
Kratz Ann M.
Snyder Marvin
LandOfFree
Fabrication of silicon carbide integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication of silicon carbide integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of silicon carbide integrated circuits will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1101930