Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Field plate electrode
Reexamination Certificate
2005-01-18
2005-01-18
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Field plate electrode
C438S456000, C438S458000, C438S459000, C438S464000, C438S692000, C438S977000
Reexamination Certificate
active
06844241
ABSTRACT:
In some embodiments, a circuit structure comprises a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers in the opening. In some embodiments, one conductive layer provides an electromagnetic shield that shields the substrate from AC signals carried by a contact pad made from another conductive layer on a backside of the substrate. The conductive layers can also be used to form capacitor/rectifier networks. Manufacturing methods also provided.
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Halahan Patrick B.
Siniaguine Oleg
MacPherson Kwok & Chen & Heid LLP
Shenker Michael
Thomas Toniae M.
Tru-Si Technologies Inc.
Wilczewski Mary
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