Fabrication of semiconductor light-emitting device

Details Fabrication of semiconductor light-emitting device Fabrication of semiconductor light-emitting device

1999-02-03

2000-10-17

Niebling, John F.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

H01L 2100

Patent

active

061330582

ABSTRACT:
A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.

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Partial English translation of Office Action from corresponding Japanese Patent Application No. 8-505644 dated Aug. 10, 1999.
Shuji Nakamura et al., P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light Emitting Diodes, Jpn. J. Appl. Phys, vol. 32 (1993) pp. L8-Lll, Part 2, No. 1A/B, Jan. 15, 1993.
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English translation of Office Action dated Jan. 12, 1999 from corresponding Japanese Patent Application No. 8-505644 (4 pages).

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