Fabrication of semiconductor laser elements

Details Fabrication of semiconductor laser elements Fabrication of semiconductor laser elements

1993-09-10

1994-12-27

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

148DIG95, H01L 2120

Patent

active

053765818

ABSTRACT:
In a process for fabricating a semiconductor laser by forming a double-heterostructure made up of a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate at the first growth step, forming protecting films for selective growth on both sides of a striped region for current injection, without etching the second cladding layer, and growing a third cladding layer and a contact layer for current injection at a second growth step, the second cladding layer formed at the first growth step is grown to the thickness required for achieving laser characteristics.

REFERENCES:
patent: 4835117 (1989-05-01), Ohba et al.
patent: 5053356 (1991-10-01), Mitsui et al.
patent: 5304507 (1994-04-01), Unozawa

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