Fabrication of semiconductor interconnect structures

Details Fabrication of semiconductor interconnect structures Fabrication of semiconductor interconnect structures

2007-02-06

2007-02-06

Eley, Timothy V. (Department: 3724)

Abrading

Abrading process

With critical nonabrading work treating

C451S059000, C451S067000

Reexamination Certificate

active

10264726

ABSTRACT:
A system and a method of forming copper interconnect structures in a surface of a wafer is provided. The method includes a step of performing a planar electroplating process in an electrochemical mechanical deposition station for filling copper material into a plurality of cavities formed in the surface of the wafer. The electroplating continues until a planar layer of copper with a predetermined thickness is formed on the surface of the wafer. In a following chemical mechanical polishing step the planar layer is removed until the copper remains in the cavities, insulated from one another by exposed regions of the dielectric layer.

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