Fabrication of semiconductor interconnect structure

Details Fabrication of semiconductor interconnect structure Fabrication of semiconductor interconnect structure

2011-07-05

2011-07-05

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S745000, C216S100000

Reexamination Certificate

active

07972970

ABSTRACT:
An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

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