Fabrication of semiconductor integrated circuit structure includ

Details Fabrication of semiconductor integrated circuit structure includ Fabrication of semiconductor integrated circuit structure includ

1976-10-18

1978-05-09

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 148 15, 148175, 148187, 148190, 148191, 357 44, 357 46, 357 48, 357 89, 357 90, 357 91, H01L 2122, H01L 2120

Patent

active

040879003

ABSTRACT:
A version of integrated injection logic is disclosed in which both the switching transistor and the current source transistor are of the vertical type and in which the logic gates are fabricated in the same semiconductor integrated chip with linear circuits which are based on the complementary bipolar integrated circuit technology.
The injection logic gate is fabricated simultaneously with the linear integrated circuit using selected steps of the complementary bipolar technology. High voltage linear circuits and efficient logic circuits are achieved based on the use of a single moderate resistivity N-type epitaxial layer deposited on a high resistivity P-type substrate. In the logic circuit portion the epitaxial layer forms the collector zone of the current source transistor and the base zone of the switching transistor.

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patent: 3667006 (1972-05-01), Ruegg
patent: 3702428 (1972-11-01), Schmitz et al.
patent: 3823353 (1974-07-01), Berger et al.
patent: 3909807 (1975-09-01), Fulton
patent: 3922565 (1975-11-01), Berger et al.
patent: 3930909 (1976-01-01), Schmitz et al.
patent: 3955269 (1976-05-01), Magdo et al.
patent: 4032962 (1977-06-01), Balyoz et al.
Platt, A., "High Integrated Base Doping Transistor" I.B.M. Tech. Discl. Bull., vol. 13, No. 3, Aug. 1970, pp. 815-816.
Berger et al., "Monolithically Integrated Logical Basic Circuit" Ibid., vol. 16, No. 2, Jul. 1973, pp. 650-651.

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