Fabrication of semiconductor devices utilizing ion implantation

Details Fabrication of semiconductor devices utilizing ion implantation Fabrication of semiconductor devices utilizing ion implantation

1976-10-01

1977-07-05

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29580, 148175, 148187, 156648, 357 26, 357 51, 357 91, 29610SG, H01L 21265, H01L 2720

Patent

active

040337871

ABSTRACT:
Semiconductor material stress sensors are provided where the sensing resistors therein have good electrical stability while being sufficiently protected without degrading sensor performance. This is accomplished through control of the locations of the maximum concentrations of the resistor dopant.

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Seidel et al., "Buried-Guarded Layer Ion-Implanted Resistors" IEEE Trans. on Electron Devices, vol. ED-20, No. 8, Aug. 1973, pp. 744-748.

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