Fabrication of semiconductor devices using phosphosilicate glass

Details Fabrication of semiconductor devices using phosphosilicate glass Fabrication of semiconductor devices using phosphosilicate glass

1989-05-01

1991-09-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

427 42, 501 12, 501 54, 501 63, 148DIG133, 20419223, C03C 300, H01L 2102

Patent

active

050473697

ABSTRACT:
This invention is directed to a process of producing semiconductor devices which involves deposition of protective glass layers by a particle beam technique from targets of phosphosilicate glass, as well as a process for production of such targets. The phosphosilicate glass containing 1-15 mole percent P.sub.2 O.sub.5 is produced by a sol/gel technique which involves mixing of a fumed silica, with a surface area of 50-400 m.sup.2 /g, preferably about 200 m.sup.2 /g, with phosphoric acid and water to form a sol with 20-55 wt. % silica, allowing it to gel, drying at ambient conditions, dehydrating at about 650.degree. C. in an atmosphere of an inert gas and chlorine and fluorine containing gases, heating up at a certain rate of from 100.degree. to 180.degree. C. per hour to a peak sintering temperature below 1200.degree. C. and cooling so as to produce amorphous and transparent glass suitable for use as a target. The glass layers are highly advantageous as encapsulating layers, diffusion barrier layers, etc., especially for optical type and semiconductor devices. Production of the phosphosilicate glass by the sol/gel technique is highly advantageous over the conventional melting technique, being faster and much less expensive than the latter.

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