Fabrication of semiconductor devices including double annealing

Details Fabrication of semiconductor devices including double annealing Fabrication of semiconductor devices including double annealing

1980-08-04

1982-12-21

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 23, 357 91, 427 82, H01L 21477, H01L 754

Patent

active

043647790

ABSTRACT:
A silicon device can be made more resistant to the destructive effects of ionizing radiation by a double annealing; the first annealing to a temperature of the order of 400 degrees C. in hydrogen, the second annealing also to a temperature of 400 degrees C. at a time when the device is not sealed against escape of hydrogen.

REFERENCES:
patent: 3615873 (1971-10-01), Sluss, Jr.
patent: 3849204 (1974-11-01), Fowler
patent: 3923559 (1975-12-01), Sinha
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4151007 (1979-04-01), Levinstein et al.
patent: 4154873 (1979-05-01), Hickox et al.
patent: 4184896 (1980-01-01), Millea
Revesz, J. Electrochem. Soc., 124 (11), (1977), pp. 1811-1813.
Fahrner, J. Electrochem. Soc., 121 (6), (1974), pp. 784-787.
Velchev et al., Radiation Effects, 41, (1979), pp. 99-106.

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