Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-10-03
1987-03-17
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29569L, 29576C, 148DIG93, 148DIG94, 148DIG164, H01L 2142
Patent
active
046496246
ABSTRACT:
This invention relates to a process of manufacturing an integrated structure in which optical signals can be processed in an electrooptic material such as lithium tantalate and electrical signals can be processed in a semiconductor material such as silicon. Microelectronic semiconductors are fabricated in the semiconductor material and electrooptic devices are fabricated in the electrooptic material. Devices made by the process of the present invention are also disclosed.
REFERENCES:
patent: 4021834 (1977-05-01), Epstein et al.
patent: 4220395 (1980-09-01), Wang et al.
patent: 4360246 (1982-11-01), Figueroa
Tien, P. K., Giordmaine, J. A., "Building the Integrated Optical Circuit", ptical Spectra., Jun. 1981.
Alferness, R. C., Bohl, L. L., Divino, M. D., "Low Loss Fibre Coupled Waveguide Directional Coupler Modulator", Electronic Letters, 18, 12, 1982.
Douglas, J. H., "Route to 3-D Chips", High Technology, Sep., 1983.
Miller, R. C., Savage, A., "Temperature Dependence of the Optical Properties of Ferroelectric LiNbO.sub.3 and LiTaO.sub.3 ", Applied Physics Letters, 9, 4, Aug. 1966.
Beers Robert F.
Callahan John T.
Fendelman Harvey
Hearn Brian E.
Johnston Ervin F.
LandOfFree
Fabrication of semiconductor devices in recrystallized semicondu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication of semiconductor devices in recrystallized semicondu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of semiconductor devices in recrystallized semicondu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1779550