Fabrication of semiconductor devices having planar recessed oxid

Details Fabrication of semiconductor devices having planar recessed oxid Fabrication of semiconductor devices having planar recessed oxid

1980-03-10

1981-06-09

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148187, H01L 21302

Patent

active

042715830

ABSTRACT:
In the fabrication of semiconductor integrated circuits which include recessed oxide isolation regions (29), formation of the undesired "bird's head" and "bird's beak" is avoided by reducing the rate of oxide growth from the sidewalls of isotropically etched recesses (22) while oxide is being grown from the bottoms of the recess regions. A silicon nitride mask (24) formed selectively on each of the sidewalls which has previously been coated with a thin silicon dioxide layer (23) reduces the rate of oxide growth therefrom, so that the oxidized recess regions have substantially planar surfaces after termination of the oxide growth.

REFERENCES:
patent: 3761327 (1973-09-01), Harlow et al.
patent: 3958040 (1976-05-01), Webb
patent: 4002511 (1977-01-01), Magdo et al.
patent: 4088516 (1978-05-01), Kondo et al.
patent: 4209349 (1980-06-01), Ho et al.
patent: 4219369 (1980-08-01), Ogiue et al.
Cosand et al., Extended Abstracts, Electrochem. Soc., Spring Meeting, Wn. D.C. (1976), pp. 292 and 293.

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