Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-08-23
2011-08-23
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S094000, C257S747000, C257S751000, C257S758000, C257SE33062
Reexamination Certificate
active
08004001
ABSTRACT:
A semiconductor device for light emission having a plurality of epitaxial layers with an n-type layer for light emission and a p-type layer for light reflection. The p-type layer has at least one seed layer for an outer layer of a conductive metal. The at least at least one seed layer is a material for providing a buffer for differential thermal expansion of the outer layer and the light reflecting layer.
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Kang Xuejun
Wu Daike
Yuan Shu
Blakely Sokoloff Taylor & Zafman LLP.
Louie Wai-Sing
Tinggi Technologies Private Limited
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