Fabrication of semiconductor device

Details Fabrication of semiconductor device Fabrication of semiconductor device

1975-06-30

1978-03-28

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 204 15, 357 91, B01J 1700

Patent

active

040807215

ABSTRACT:
A method for fabricating an indium antimonide semiconductor device which includes anodizing through a portion of the thickness of an indium antimonide substrate containing an active impurity of a first type; selectively ion implanting an active impurity of a second type into the indium antimonide substrate; annealing; providing for ohmic electrical contact between preselected regions of the indium antimonide substrate and subsequently applied electrical contacts; and depositing a plurality of electrical contacts, a predetermined number of which are in ohmic electrical contact with the preselected regions of the substrate to thereby provide the semiconductor device; and semiconductor device obtained thereby.

REFERENCES:
patent: 3515956 (1970-06-01), Martin
patent: 3738917 (1973-06-01), Spath
patent: 3929589 (1975-12-01), Ermanis

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