Fabrication of semiconductive devices

Details Fabrication of semiconductive devices Fabrication of semiconductive devices

1977-02-11

1978-08-22

Goldberg, Howard N.

Metal working

Method of mechanical manufacture

Electrical device making

357 15, 427 84, B01J 1700

Patent

active

041078357

ABSTRACT:
An improved Schottky barrier connection is made to a desired region of a silicon wafer by implanting the region with ions to peak at a particular depth; depositing a suitable contact material, such as platinum, over such region; and then heating the wafer to react the platinum and the silicon such that the interface between the platinum-silicide and the silicon penetrates beyond the peak depth of the implant, some of the encountered dopant ions being accumulated at the advancing interface in snowplow fashion. There results a narrowed and concentrated layer of implanted ions localized just below the interface of the silicide and the silicon. The presence of this layer permits conduction in the forward direction at lower applied voltages without substantially degrading the reverse blocking characteristics.

REFERENCES:
patent: 3918149 (1975-11-01), Roberts
patent: 3935635 (1976-02-01), Botzenhardt
patent: 3938243 (1976-02-01), Rosvold
patent: 3968272 (1976-07-01), Anand
patent: 3995301 (1976-11-01), Magdo

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