Fabrication of quantum well polarization independent active devi

Details Fabrication of quantum well polarization independent active devi Fabrication of quantum well polarization independent active devi

1997-01-23

1998-05-26

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 385130, 438 59, H01L 2906

Patent

active

057570230

ABSTRACT:
An active semiconductor device that performs in a substantially polarization independent manner. A quantum well waveguide is intermixed by intermixing atoms across an interface between well and barrier layers. The atoms include at least 2 groups wherein intermixing of one group is at a substantially greater rate than another group. Cations are interdiffused at a greater rate than said anions across interfaces between well and barrier layers. The intermixing must be sufficient to provide strain within layers of the waveguide and sufficient to at least partially degenerate light hole and heavy hole bands of the structure. Preferably intermixing is sufficient to completely degenerate light hole and heavy hold bands to essentially produce a device that is completely polarization independent.

REFERENCES:
patent: 5090790 (1992-02-01), Zucker
patent: 5238868 (1993-08-01), Elman et al.
patent: 5395793 (1995-03-01), Charbonneau et al.

Affiliated with

Also associated with

Rating

Fabrication of quantum well polarization independent active devi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of quantum well polarization independent active devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of quantum well polarization independent active devi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1964348