Fabrication of quantum confinement semiconductor light-emitting

Details Fabrication of quantum confinement semiconductor light-emitting Fabrication of quantum confinement semiconductor light-emitting

1995-12-29

1997-03-04

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 62, 437126, 437133, H01L 2120

Patent

active

056078765

ABSTRACT:
The present invention consists of an electroluminescent structure and method of fabrication of that structure in materials which have an indirect bandgap in their bulk form. The processing steps can all be standard VLSI methods. Quantum columns, quantum wires or quantum dots may be formed, for example in an array, by masking, reactive ion etching and oxidation. When the semiconductor core is sufficiently thin, quantum mechanical confinement effects raise the energy and the radiative recombination efficiency of injected carriers. Tuning the core diameters allows selection of individual or multiple wavelength emission bands.

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