Fabrication of polysilicon to polysilicon capacitors with a comp

Details Fabrication of polysilicon to polysilicon capacitors with a comp Fabrication of polysilicon to polysilicon capacitors with a comp

1983-02-23

1986-03-25

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29577C, 29578, 148187, H01L 21283

Patent

active

045773904

ABSTRACT:
The present invention teaches a new method for formation of thin dielectrics over polysilicon. This technique permits the fabrication of polysilicon to polysilicon capacitors with high specific capacitance (per unit area). This technique is completely compatible with standard MOS dual polysilicon regrown gate oxide processes. The high value of specific capacitance is achieved by using a composite dielectric which has high dielectric integrity and whose thickness is completely independent of the formation of the regular gate oxide under the second polysilicon layer. No extra mask steps are required. The composite dielectric is formed as a grown or deposited oxide followed by deposited nitride which is then reoxidized. Optionally, a second oxide is deposited before reoxidation forms.

REFERENCES:
patent: 4270262 (1981-06-01), Hori et al.
patent: 4426764 (1984-01-01), Kosa et al.
patent: 4490900 (1985-01-01), Chiu

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