Fabrication of polysilicon fets on alkaline earth alumino-silica

Fishing – trapping – and vermin destroying

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437978, 437239, 357 237, H01L 21316, H01L 21318, H01L 2184, H01L 2195

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active

048513636

ABSTRACT:
A method of fabricating polycrystalline silicon thin film field effect transistors on low cost alkaline earth alumino-silicate glass substrates which can tolerate device processing temperatures of approximately 800.degree. C.

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