Fabrication of P-N junction semiconductor device

Details Fabrication of P-N junction semiconductor device Fabrication of P-N junction semiconductor device

1990-06-26

1991-04-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437177, 437184, 437904, 148DIG140, M01L 21443

Patent

active

050064835

ABSTRACT:
A gallium arsenide diode is disclosed which has a very thin resistive layer of a metal oxide, typically titanium oxide, formed annularly on a semiconductor substrate across the exposed annular periphery of a p-n junction. The titanium oxide layer has a sheet resistance of not less than 10 kilohms per square and creates a Schottky barrier between itself and the neighboring n type region of the substrate. The titanium oxide layer can be formed by first vacuum depositing titanium on the substrate and then heating the titanium layer.

REFERENCES:
patent: 3923975 (1975-12-01), Calviello
patent: 4149307 (1979-04-01), Henderson
patent: 4307132 (1981-12-01), Chu et al.
patent: 4636833 (1987-01-01), Nishioka et al.

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