Fabrication of oxynitride frontside microstructures

Details Fabrication of oxynitride frontside microstructures Fabrication of oxynitride frontside microstructures

1991-05-28

1992-11-17

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437228, 437921, 437901, 437966, 148DIG159, H01L 2130

Patent

active

051643391

ABSTRACT:
Method for producing a low stress silicon oxynitride microstructure on a semiconductor substrate at temperatures not higher than 500.degree. C. The method is particularly adapted for forming integrated silicon sensors where the oxynitride microstructure is fabricated on a substrate under conditions which do not harm the integrated circuit electronics.

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