Fabrication of on-package and on-chip structure using...

Semiconductor device manufacturing: process – Making passive device

Reexamination Certificate

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C257S531000

Reexamination Certificate

active

06890829

ABSTRACT:
The invention relates to a process of forming an on-chip package inductor. The process includes providing a substrate with at least one microelectronic device packaged therewith. As part of the inventive process, electrical communication is formed for the microelectronic device. The electrical communication includes at least two electrically conductive layers. As part of the inventive technology, the inductor is patterned on the substrate before, during, or after formation of the electrical communication. The inductor is connected to the at least one microelectronic device.

REFERENCES:
patent: 5095357 (1992-03-01), Andoh et al.
patent: 5801521 (1998-09-01), Mizoguchi et al.
patent: 6083802 (2000-07-01), Wen et al.
patent: 6153489 (2000-11-01), Park et al.
patent: 6201287 (2001-03-01), Forbes
patent: 6218729 (2001-04-01), Zavrel, Jr. et al.
patent: 6274937 (2001-08-01), Ahn et al.
patent: 6303423 (2001-10-01), Lin
patent: 6423570 (2002-07-01), Ma et al.
patent: 6573822 (2003-06-01), Ma et al.
patent: 20020070443 (2002-06-01), Mu et al.
patent: 20020127780 (2002-09-01), Ma et al.
patent: 20020190835 (2002-12-01), Ma et al.

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