Fabrication of nanometer single crystal metallic CoSi.sub.2 stru

Details Fabrication of nanometer single crystal metallic CoSi.sub.2 stru Fabrication of nanometer single crystal metallic CoSi.sub.2 stru

1991-03-27

1991-12-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437973, 437935, 437942, 437907, 437200, 148DIG46, 148DIG48, 148DIG154, H01L 21265

Patent

active

050752430

ABSTRACT:
Amorphous Co:Si (1:2 ratio) films (12) are electron gun-evaporated on clean Si(111) substrates (10), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam (14) to form very small crystalline CoSi.sub.2 regions (12') in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.

REFERENCES:
patent: 4554045 (1985-11-01), Bean et al.
patent: 4555301 (1985-11-01), Gibson et al.
patent: 4755256 (1988-07-01), Ditcheck
patent: 4816421 (1989-03-01), Dynes et al.
patent: 4855014 (1989-08-01), Kakimoto et al.
patent: 4897150 (1990-01-01), Dooley et al.

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