Fabrication of MOSFETs by laser annealing through anti-reflectiv

Details Fabrication of MOSFETs by laser annealing through anti-reflectiv Fabrication of MOSFETs by laser annealing through anti-reflectiv

1981-07-17

1984-02-14

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 427 531, 357 91, H01L 21263, H01L 21265

Patent

active

044314590

ABSTRACT:
A method of annealing an ion implanted semiconductor device using an antireflective dielectric coating on the device for maximizing the coupling of photon radiation into the device. An IGFET device made in accordance with the method, is shown.

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