Fabrication of metal lines for semiconductor devices

Details Fabrication of metal lines for semiconductor devices Fabrication of metal lines for semiconductor devices

1983-11-09

1985-11-12

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29579, 29591, 357 15, 148DIG143, H01L 21285

Patent

active

045519056

ABSTRACT:
A method of fabricating MESFET devices having a submicron line gate electrode is disclosed. The method includes the formation of a single layer of resist material on a semiconductor surface; formation of a resist cavity through optical lithography, the cavity exposing a selected portion of the semiconductor surface; depositing by way of angled evaporation at least one gate wall within said resist cavity, the gate wall defining a shaped gate cavity; depositing gate electrode material within the gate cavity, and removing the resist material. In one embodiment of the invention the gate wall is removed from the gate electrode material, leaving a free-standing electrode. In another embodiment, the gate wall is a permanent part of the electrode structure.

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M. Matsumura et al., "Sub-Micrometre Lift-Off Line with T-Shaped Cross-Sectional Form", Electron. Lett., vol. 17, pp. 429-430, Jun. 1981.
K. Kamei et al., "Extremely Low-Noise MESFET's Fabricated by Metal-Organic Chemical Vapour Deposition", Electron. Lett., vol. 17, pp. 450-451, Jun. 1981.
G. C. Taylor et al., "Ion-Implanted K-Band GaAs Power FET", in MTT-S Int. Microwave Symp. Dig., pp. 46-48, 1981.
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