Fabrication of metal film stacks having improved bottom...

Details Fabrication of metal film stacks having improved bottom... Fabrication of metal film stacks having improved bottom...

2011-06-14

2011-06-14

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257SE23010, C257SE21029, C257SE21495, C438S618000

Reexamination Certificate

active

07960835

ABSTRACT:
A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.

REFERENCES:
patent: 5801096 (1998-09-01), Lee et al.
patent: 5946600 (1999-08-01), Hurwitz et al.
patent: 6133142 (2000-10-01), Tran et al.
patent: 6262478 (2001-07-01), Hurwitz et al.
patent: 6297557 (2001-10-01), Bothra
patent: 6383914 (2002-05-01), Yasuda
patent: 7358592 (2008-04-01), Ueno
patent: 2005/0227378 (2005-10-01), Moise et al.
patent: 419711 (2001-01-01), None
patent: 200504927 (2005-02-01), None
patent: I291705 (2007-12-01), None

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