Fabrication of mesa devices by MBE growth over channeled substra

Details Fabrication of mesa devices by MBE growth over channeled substra Fabrication of mesa devices by MBE growth over channeled substra

1977-03-14

1978-07-11

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29590, 148175, 156647, 156649, 331 945H, 357 17, 357 18, 357 55, 357 56, 357 60, 156612, B01J 1700, H01L 21203, H01L 2904

Patent

active

040993051

ABSTRACT:
Parallel channels are separated by ridges formed in a semiconductor body in such a way that each channel is wider at its base than at its top. Molecular beam epitaxy is used to deposit semiconductor layers on the ridges and in the channels. Because each channel is narrower at its top than at its base, the configuration is essentially self-masking. That is, the layers in the channel are physically separate from those on the ridges, as would be metallic contacts deposited on the layers. This technique is employed in the fabrication of a plurality of self-aligned, stripe geometry, mesa double heterostructure junction lasers.

REFERENCES:
patent: 3813585 (1974-05-01), Tarvi et al.
patent: 3833435 (1974-09-01), Logan et al.
patent: 3855690 (1974-12-01), Kim et al.
patent: 3865625 (1975-02-01), Cho et al.
patent: 3887404 (1975-06-01), Chane
patent: 3906541 (1975-09-01), Goronkin
patent: 3974002 (1976-08-01), Casey et al.
patent: 3983510 (1976-09-01), Hayashi et al.
patent: 4033796 (1977-07-01), Burnham et al.
Nagata et al., "Self-Masking Selective Epitaxy--Method", J. Applied Physics, vol. 48, No. 3, Mar. 1977, pp. 940-942.
Tsukada et al., "Very-Low-Current--Double-Heterostructure--Lasers", Applied Physics Letters, vol. 20, No. 9, May 1, 1972, pp. 344-345.
Samid et al., "Embedded Heterostructure Epitaxy", Ibid., vol. 27, No. 7, Oct. 1, 1975, pp. 405-407.
Lee et al., "Low-Threshold--Embedded Heterostructure Lasers", Ibid., vol. 29, No. 6, Sep. 15, 1976, pp. 365-367.
Dumke et al., "GaAs Field-Effect--Self-Registered Gates", I.B.M. Tech. Discl. Bull., vol. 14, No. 4, Sep. 1971, pp. 1248-1249.
Iida et al., "Morphological Studies on Selective Growth of GaAs", J. of Crystal Growth, vol. 13/14, (1972), pp. 336-341.
Tsang et al., "Profile and Groove-Depth--GaAs--System", Applied Physics Letters, vol. 28, No. 1, Jan. 1, 1976, pp. 44-46.

Affiliated with

Also associated with

Rating

Fabrication of mesa devices by MBE growth over channeled substra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of mesa devices by MBE growth over channeled substra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of mesa devices by MBE growth over channeled substra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-254898