Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1977-03-14
1978-07-11
Rutledge, L. Dewayne
Metal working
Method of mechanical manufacture
Assembling or joining
29580, 29590, 148175, 156647, 156649, 331 945H, 357 17, 357 18, 357 55, 357 56, 357 60, 156612, B01J 1700, H01L 21203, H01L 2904
Patent
active
040993051
ABSTRACT:
Parallel channels are separated by ridges formed in a semiconductor body in such a way that each channel is wider at its base than at its top. Molecular beam epitaxy is used to deposit semiconductor layers on the ridges and in the channels. Because each channel is narrower at its top than at its base, the configuration is essentially self-masking. That is, the layers in the channel are physically separate from those on the ridges, as would be metallic contacts deposited on the layers. This technique is employed in the fabrication of a plurality of self-aligned, stripe geometry, mesa double heterostructure junction lasers.
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Cho Alfred Yi
Tsang Won-Tien
Bell Telephone Laboratories Incorporated
Rutledge L. Dewayne
Saba W. G.
Urbano Michael J.
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