Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2005-05-17
2005-05-17
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S201000, C257S743000
Reexamination Certificate
active
06894325
ABSTRACT:
A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor compound so that the semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.
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Docter Daniel P.
Micovic Miroslav
Cao Phat X.
Doan Theresa T.
HRL Laboratories LLC
Ladas & Parry LLP
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