Fabrication of low leakage-current backside illuminated...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S447000

Reexamination Certificate

active

10842938

ABSTRACT:
Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.

REFERENCES:
patent: 4127932 (1978-12-01), Hartman et al.
patent: 4131488 (1978-12-01), Lesk et al.
patent: 4246590 (1981-01-01), Thomas et al.
patent: 4612408 (1986-09-01), Moddel et al.
patent: 4774557 (1988-09-01), Kosonocky
patent: 4857980 (1989-08-01), Hoeberechts
patent: 4936653 (1990-06-01), Schemmel et al.
patent: 5059787 (1991-10-01), Lou
patent: 5360748 (1994-11-01), Nadahara et al.
patent: 5424222 (1995-06-01), Arndt
patent: 5563431 (1996-10-01), Ohmi et al.
patent: 5739067 (1998-04-01), DeBusk et al.
patent: 5923071 (1999-07-01), Saito
patent: 5997713 (1999-12-01), Beetz, Jr. et al.
patent: 6025585 (2000-02-01), Holland
patent: 6054373 (2000-04-01), Tomita et al.
patent: 6204506 (2001-03-01), Akahori et al.
patent: 6259085 (2001-07-01), Holland
patent: 6504178 (2003-01-01), Carlson et al.
patent: 6670258 (2003-12-01), Carlson et al.
patent: 6734416 (2004-05-01), Carlson et al.
patent: 2002/0011639 (2002-01-01), Carlson et al.
patent: 2002/0020846 (2002-02-01), Pi et al.
patent: 2006/0157811 (2006-07-01), Carlson et al.
patent: 2006/0175539 (2006-08-01), Carlson et al.
patent: 2006/0175677 (2006-08-01), Carlson et al.
patent: 2007/0012866 (2007-01-01), Carlson et al.
patent: 198 38 430 (2000-03-01), None
patent: 56-150878 (1981-11-01), None
patent: 98/20561 (1998-05-01), None
patent: 01/82382 (2001-11-01), None
Hartiti, et al., “Back Surface Field-Induced Gettering in Multicrysalline Silicon”,IEEE, pp. 998-1001 (1991).
Holland, “An IC-Compatible Detector Process”,IEEE Transactions on Nuclear Science, 36(1):283-289 (Feb. 1989).
Holland, “Development of Low Noise, Back-Side Illuminated Silicon Photodiode Arrays”IEEE Transactions on Nuclear Science, 44(3):443-447 (Jun. 1997).
Holland, S., “Fabrication of Detectors and Transistors in High-Resistivity Silicon”,Nuclear Instruments&Methods in Physics Research, Section A(Accelerators, Spectrometers, Detectors and Associated Equipment), A275(3):537-541 (1989).
Patent Abstracts of Japan for Japanese Patent Application JP 56-15078, published Nov. 21, 1981, entitled: “Semiconductor Image Pickup Device”.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fabrication of low leakage-current backside illuminated... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of low leakage-current backside illuminated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of low leakage-current backside illuminated... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3871725

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.