Fabrication of lateral bipolar transistor

Details Fabrication of lateral bipolar transistor Fabrication of lateral bipolar transistor

1993-02-23

1994-12-27

Thomas, Tom

Fishing, trapping, and vermin destroying

437917, 437 55, H01L 21265

Patent

active

053765656

ABSTRACT:
A process for forming a lateral bipolar transistor wherein apertures for forming a current electrode (collector or emitter) region, a base region and an isolation region are all formed simultaneously so that they are automatically aligned. Also, a mask area covering the base region when the current electrode region is being doped only covers the base (oversize) region. The mask is easier to remove after it has itself been doped/cured during the implantation process because it is smaller.

REFERENCES:
patent: 3891480 (1975-06-01), Fulkerson
patent: 4021270 (1977-05-01), Hunt et al.
patent: 4110126 (1978-08-01), Bergeron et al.
patent: 4403395 (1983-09-01), Curran
patent: 4440580 (1984-04-01), Gable
patent: 4446611 (1984-05-01), Bergeron et al.
patent: 4544940 (1985-10-01), Weaver, II et al.
patent: 4616405 (1986-10-01), Yasuoka
patent: 4978630 (1990-12-01), Kim
patent: 5254486 (1993-10-01), Alter
Journal of the Electrochemical Society, vol. 126, No. 4, Apr. 1979, Manchester New Hampshire, pp. 642-644, R. Kesavan et al., "Enhancement of Lateral P-N-P Current Gain by Gettering".

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