Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-04-09
1981-03-10
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576W, 29577C, 29578, 29580, 148175, 148187, 156647, 156648, 156649, 156657, 357 50, 357 55, 357 59, 427 86, 427 93, H01L 2176, H01L 2710
Patent
active
042552079
ABSTRACT:
V-shaped lateral dielectric isolation grooves divide a semiconductor layer into a plurality of regions. The oxide layer above the polycrystalline material in the grooves is thicker than the field oxide layer on the semiconductor layer to prevent the creation of retrograde surface profiles and mask the polycrystalline material during self-aligned device fabrication in the semiconductor layer. The field oxide is formed on the semiconductor layer before the isolation groove fabrication and prevented from increasing in thickness by an oxide inhibiting layer during the isolation groove fabrication.
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Lucas William G.
Nicolay Hugh C.
Dean R.
Harris Corporation
Saba W. G.
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