Patent
1980-10-24
1987-06-02
Larkins, William D.
357 55, 357 59, H01L 2704
Patent
active
046707697
ABSTRACT:
V-shaped lateral dielectric isolation grooves divide a semiconductor layer into a plurality of regions. The oxide layer above the polycrystalline material in the grooves is thicker than the field oxide layer on the semiconductor layer to prevent the creation of retrograde surface profiles and mask the polycrystalline material during self-aligned device fabrication in the semiconductor layer. The field oxide is formed on the semiconductor layer before the isolation groove fabrication and prevented from increasing in thickness by an oxide inhibiting layer during the isolation groove fabrication.
REFERENCES:
patent: 3500139 (1970-03-01), Frouin et al.
patent: 3648125 (1972-03-01), Peltzer
patent: 3844858 (1974-10-01), Bean
patent: 3878552 (1975-04-01), Rodgers
patent: 3883948 (1975-05-01), Allison
patent: 3892608 (1975-07-01), Kuhn
patent: 3911562 (1975-10-01), Youmans
patent: 3913124 (1975-10-01), Roberson
patent: 3966501 (1976-06-01), Nomura et al.
patent: 3979237 (1976-09-01), Morcom et al.
patent: 3998673 (1976-12-01), Chow
patent: 4036706 (1977-07-01), Scherrer
patent: 4038110 (1977-07-01), Feng
patent: 4048649 (1977-09-01), Bohn
patent: 4084174 (1978-04-01), Crippen et al.
patent: 4338620 (1982-07-01), Kawabe
Lucas William G.
Nicolay Hugh C.
Harris Corporation
Larkins William D.
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