Fabrication of ion implanted P-N junction devices

Details Fabrication of ion implanted P-N junction devices Fabrication of ion implanted P-N junction devices

1976-02-23

1977-01-25

Tupman, W.

Metal working

Method of mechanical manufacture

Electrical device making

148 15, 357 61, 357 63, 357 91, B01J 1700

Patent

active

040043428

ABSTRACT:
Light emitters and photovoltaic detectors are fabricated by ion implantation of cadmium, zinc, bromine or chlorine ions into a p-type CuInSe.sub.2 substrate so as to form a p-n semiconductor junction.

REFERENCES:
patent: 3767471 (1973-10-01), Kasper
patent: 3940847 (1976-03-01), Park
Journal of the Electrochemical Society, vol. 103, No. 11, pp. 609 and 610, Austin et al., "New Semiconductors with the Chalcopyrite Structure."

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