Fabrication of integrated circuits utilizing thick high-resoluti

Details Fabrication of integrated circuits utilizing thick high-resoluti Fabrication of integrated circuits utilizing thick high-resoluti

1978-09-11

1981-01-13

Williams, Howard S.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192EC, 156643, 156656, 156657, 1566591, H01L 21312

Patent

active

042447992

ABSTRACT:
In an integrated circuit fabrication sequence, a relatively thick sacrificial layer (18) is deposited on a nonplanar surface of a device wafer in which high-resolution features are to be defined. The thick layer is characterized by a conforming lower surface and an essentially planar top surface and by the capability of being patterned in a high-resolution way. An intermediate masking layer (22) and then a thin resist layer (20) are deposited on the top surface of the sacrificial layer, the thickness of the resist layer being insufficient by itself to provide adequate step coverage if the resist layer were applied directly on the nonplanar surface. A high-resolution pattern defined in the resist layer is transferred into the intermediate masking layer. Subsequently, a dry processing technique is utilized to replicate the pattern in the sacrificial layer. A high-resolution pattern with near-vertical sidewalls is thereby produced in the sacrificial layer. By means of the patterned sacrificial layer, high-resolution features are then defined in the underlying nonplanar surface.

REFERENCES:
patent: 3700497 (1972-10-01), Epifano et al.
patent: 3867216 (1975-02-01), Jacob
patent: 3873361 (1975-03-01), Franco et al.
patent: 3962004 (1976-06-01), Sonneborn
patent: 3985597 (1976-10-01), Zielinski
patent: 4004044 (1977-01-01), Franco et al.
patent: 4024041 (1977-05-01), Hanazono et al.
patent: 4025411 (1977-05-01), Hom-ma et al.
patent: 4070501 (1978-01-01), Corbin et al.
patent: 4089766 (1978-05-01), Paal et al.
patent: 4092442 (1978-05-01), Agnihotri et al.
J. L. Vossen and W. Kern, Editors, Thin Film Processes, Academic Press, New York, 1978, pp. 497-498, 537-545.

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