Fabrication of integrated circuits employing only ion implantati

Details Fabrication of integrated circuits employing only ion implantati Fabrication of integrated circuits employing only ion implantati

1979-10-01

1981-04-14

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29578, 148187, 357 34, 357 50, 357 91, H01L 21263, H01L 2704

Patent

active

042617634

ABSTRACT:
This disclosure relates to a method of fabricating an integrated circuit wherein all dopant layers are formed by ion implantation. More specifically, the buried collector of a bipolar integrated circuit is formed by ion implantation which collector has a high density of dopant species and is formed relatively deep into the substrate on which the circuit is formed. In addition, in order to reduce the number of steps employed in the fabrication, certain of the implanted species can be activated during the same high temperature annealing step. A pre-aligned mask is employed for the formation of the base contact, collector contact, and emitters, which mask can be selectively opened with a reduced number of masking steps. With such a mask, the base contact, collector contact and emittor are self-aligned even though formed at different steps in the process.

REFERENCES:
patent: 3961356 (1976-06-01), Kooi
patent: 4066473 (1978-01-01), O'Brien
patent: 4110779 (1978-08-01), Rathbone et al.
patent: 4111724 (1978-09-01), Ogiue
patent: 4149915 (1979-04-01), Bohg et al.
patent: 4175983 (1979-11-01), Schwabe
patent: 4187125 (1980-02-01), Feist
patent: 4191595 (1980-03-01), Aomura et al.
Evans et al., IEEE J. Solid State Circuits, vol. SC-8, 1973, 373.

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