Fabrication of injection lasers utilizing epitaxial growth and s

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148175, 148187, 331 945H, 357 16, 357 17, 357 18, H01L 21225, H01L 21205, H01L 3300

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042138086

ABSTRACT:
Porous silica doped with zinc is used as a p-type dopant source in the construction of rib lasers. This is preferable to the method used in the parent case of growing a zinc doped layer because epitaxial growth is liable to be accompanied by zinc diffusion into regions where it is not required. Other modifications include allowing the zinc diffusion to go right through the active layer and to dimension the device so that lateral optical guidance is unaffected by the rib.

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Dumke, W. P., "Simple Planar Double-Heterojunction Laser Structure", I.B.M. Tech. Discl. Bull., vol. 16, No. 4, Sep. 1973, p. 1186.
Smith et al., "Lattice Matched Double Heterojunction . . . Operation", Ibid., vol. 16, No. 11, Apr. 1974, pp. 3808-3809.
Tsukada, T., "GaAs-GaAlAr Buried-Heterostructure Injection Laser", J. Applied Physics, vol. 45, No. 11, No. 1974, pp. 4899-4906.

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