Fabrication of InGaAlN based compound semiconductor device

Details Fabrication of InGaAlN based compound semiconductor device Fabrication of InGaAlN based compound semiconductor device

1997-05-09

2000-08-08

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 47, 438503, H01L 2100

Patent

active

061001058

ABSTRACT:
A device for the production of a semiconductor compound by means of a metal organic vapor phase epitaxy method, has a structure including a metallic member disposed at a part brought into contact with an upstream flow of a raw material gas and another part for growing a compound semiconductor, wherein the metallic member is cooled to not higher than 300.degree. C. The present invention provides a device for the production of a semiconductor compound with high productivity using a metallic material, wherein processing precision is high and the risk of breakage is low.

REFERENCES:
patent: 4311545 (1982-01-01), Bugl et al.
patent: 4747368 (1988-05-01), Brien
patent: 5432808 (1995-07-01), Hataano et al.

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