Fabrication of infra-red charge coupled devices

Details Fabrication of infra-red charge coupled devices Fabrication of infra-red charge coupled devices

1979-10-10

1981-06-30

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148188, 357 24, 357 30, 357 63, H01L 2714, H01L 3100, H01L 2978

Patent

active

042760992

ABSTRACT:
In a method of fabricating semiconductor devices, eg infra-red charge coupled devices (IRCCDs), the invention relates to the provision of a region containing a first species of ionized dopant with a body of semiconductor material in which the device is being fabricated, in which diffusion of this ionized dopant creates an internal electric field which provides a barrier against the penetration of a second relatively faster-diffusing species of ionized dopant into a selected region of the semiconductor body. In the method described in its application to the fabrication of a monolithic IRCCD, the second species of ionized dopant is introduced into detector regions of the body of semiconductor material to render them sensitive to infra-red radiation, and the barrier provided by diffusion of the first species of the ionized dopant serves to prevent the penetration of the second dopant species into the active charge storage and transfer channels of the CCD.

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Jambotkar, C. G., IBM-Tech. Disc. Bull., 21 (1978) 577.

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