Fabrication of II-VI semiconductor device with BeTe buffer layer

Details Fabrication of II-VI semiconductor device with BeTe buffer layer Fabrication of II-VI semiconductor device with BeTe buffer layer

1997-12-15

2000-07-18

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438503, H01L 3300

Patent

active

060906375

ABSTRACT:
A II-VI semiconductor device includes a stack of II-VI semiconductor layers electrically connected to a top electrical contact. A GaAs substrate is provided which supports the stack of II-VI semiconductor layers and is positioned opposite to the top electrical contacts. A BeTe buffer layer is provided between the GaAs substrate and the stack of II-VI semiconductor layers. The BeTe buffer layer reduces stacking fault defects at the interface between the GaAs substrate and the stack of II-VI semiconductor layers.

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