Fabrication of high-speed dielectrically isolated devices utiliz

Details Fabrication of high-speed dielectrically isolated devices utiliz Fabrication of high-speed dielectrically isolated devices utiliz

1988-03-30

1989-06-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437162, 437200, 437203, 437 32, 437 40, 437 62, 437 78, 437 26, 437913, 437917, 437 2, 148DIG19, 148DIG123, 148DIG147, 357 231, 357 67, 357 35, H01L 21225

Patent

active

048393096

ABSTRACT:
A method of fabricating a dielectrically-isolated structure is disclosed rein the structure includes a layer of silicide which is selectively doped, preferably using an ion implantation process. The doped silicide is then used as the diffusion source for the subsequent formation (through a heat treatment) of various active portions (collector, emitter, drain, source, for example) of a variety of high-voltage, high-speed active devices. The non-doped silicide is advantageously utilized as a low-resistance contact between the buried diffusion region and the surface electrode. In an alternative embodiment, bottom portions of the silicide contiguous to the tub are removed, leaving only vertical silicide portions adjacent to the sidewalls of the dielectrically isolated tub.

REFERENCES:
patent: 3381182 (1968-04-01), Thornton
patent: 3653120 (1972-04-01), Sirrine et al.
patent: 3938176 (1976-02-01), Sloan, Jr.
patent: 4356622 (1982-11-01), Widmann
patent: 4520552 (1985-06-01), Arnould et al.
patent: 4553318 (1985-11-01), Chandrasekhar
patent: 4569701 (1986-02-01), Oh
patent: 4593458 (1986-06-01), Adler

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