Fabrication of gunn diode semiconductor devices

Details Fabrication of gunn diode semiconductor devices Fabrication of gunn diode semiconductor devices

1990-12-04

1992-09-08

Quach, T. N.

Fishing, trapping, and vermin destroying

437133, 437228, 437904, 437184, 148DIG135, 357 3, 156654, H01L 21302, H01L 21329

Patent

active

051458098

ABSTRACT:
An improved method for manufacturing a semiconductor device is described. In the preferred embodiment, a Gunn diode is manufactured from InP active and buffer layers. The buffer layer is deposited on a GaAs substrate using an epitaxial deposition process and the active layer is deposited onto the buffer layer. Electrical connection to the InP layers is made by etching a via through the GaAs substrate and metallizing the walls of the via. After the device has been placed in its final package, the GaAs substrate material is removed. As a result, good thermal and electrical contact is made to the InP active layer, and therefore, a Gunn diode manufactured according to this invention can reliably produced greater output power.

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