Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-05-21
1980-12-02
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, H01L 21208
Patent
active
042369479
ABSTRACT:
High quality p-n junctions are formed in silicon grown epitaxially onto a silicon substrate of one conductivity type from a melt undersaturated with silicon and containing opposite conductivity type determining impurities. Lowering the substrate into the melt causes same of the substrate dopant to enter the melt. With a substrate doping level exceeding that of the epitaxial layer that would grow in the absence of meltback, the epitaxial layer initially grows with the one conductivity type. However, as epitaxial layer thickness increases, the substrate dopant atoms in the melt are consumed and the epitaxial layer grown thereafter is of opposite conductivity type, producing a p-n junction in the epitaxial layer away from the substrate.
REFERENCES:
patent: 3530011 (1970-09-01), Suzuki et al.
patent: 3565702 (1971-02-01), Nelson
patent: 3632431 (1972-09-01), Andre
patent: 3647578 (1972-03-01), Barnett et al.
patent: 3783825 (1974-01-01), Kobayasi
patent: 4128440 (1978-12-01), Baliga
Baliga, J. of Electrochem. Soc., vol. 124, No. 10, Oct. 1977, pp. 1627-1631.
Davis James C.
General Electric Company
Ozaki G.
Snyder Marvin
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