Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly
Patent
1996-06-07
1999-02-02
Ramsey, Kenneth J.
Electric lamp or space discharge component or device manufacturi
Process
With assembly or disassembly
445 50, H01J 902
Patent
active
058656570
ABSTRACT:
A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.
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Dobkin Daniel M.
Haven Duane A.
Ludwig Paul N.
Spindt Christopher J.
Candescent Technologies Corporation
Meetin Ronald J.
Ramsey Kenneth J.
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